Comparative analysis of methods for measuring thermal parameters of integrated microwave power amplifiers on bipolar transistors

A brief analysis of methods and features measuring thermal parameters integrated microwave power amplifiers on bipolar transistors (BT) is presented. The hardware software complex implementing the method amplifier according to OST 11 0944-96 original modulation described. In both methods, temperature active region BT crystals determined by a change in certain temperature-sensitive parameter (TSP) when they are heated pulsed power. results comparative measurements resistance junction-housing L-band silicon optimal duration heating pulses standard was based previously measured transient characteristics amplifier. To exclude influence transients switching from mode measurement mode, crystal at end pulse interpolating several TSP under assumption that cooling curve has root character. It shown an integral good agreement with each other.